| Part Number | 2SC5404 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS Unit: mm l High Voltage. tput Capacitance Switching Time Storage Time Fall Time ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 7 A IC = 7 A, IB = 1.75 A IC = 7 A, IB = 1.75 A VCE = 10 V, IC = 0.1 A VCB . |
2SC5404 Datasheet and Specifications PDF
The 2SC5404 is a NPN TRANSISTOR.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SC5404 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3P(H)IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed swit. eakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IC=7A; IB=1.75A IC=7A; IB=1.75A VCB=1500V; IE=0 VEB=5V; IC. |
| Part Number | 2SC5404 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Breakdown Voltage- ：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and. se specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.25A ICBO Collector Cutoff Current VCB= 1500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Cur. |