2SD1101 Datasheet and Specifications PDF

The 2SD1101 is a Silicon NPN Transistor.

Key Specifications

Datasheet4U Logo
Part Number2SD1101 Datasheet
ManufacturerKexin Semiconductor
Overview SMD Type Silicon NPN Epitaxial 2SD1101 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low Frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 . +0.1 2.4-0.1 Low Frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collect.
Part Number2SD1101 Datasheet
DescriptionNPN TRANSISTOR
ManufacturerHitachi Semiconductor
Overview 2SD1101 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SD1101 Absolute Maximum Ratings (Ta = 25°C. emitter saturation voltage Base to emitter voltage V(BR)EBO I CBO hFE* 85
*
* VCE(sat) VBE V V Notes: 1. The 2SD1101 is grouped by h FE as follows. 2. Pulse test Grade Mark hFE B AB 85 to 170 C AC 120 to 240 See characteristic curves of 2SD467. 2 2SD1101 Maximum Collector Dissipation Curve C.
Part Number2SD1101 Datasheet
DescriptionSilicon NPN Transistor
ManufacturerRenesas
Overview 2SD1101 Silicon NPN Epitaxial REJ03G0775-0200 (Previous ADE-208-1142) Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SB831 Outline RENESAS Package code: PLSP00. BR)CBO V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) VBE Min 25 20 5
* 120
*
* Typ
*
*
*
*
*
*
* Max
*
*
* 1.0 240 0.5 1.0 Unit V V V µA V V Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 0.15 A IC = 0.5 A, IB = 0.05 A VCE = 1 V, IC = 0.15 A Rev.2..

Price & Availability

Availability and pricing information from multiple distributors.

Seller Inventory Price Breaks Buy
No distributor offers were returned for this part.