2SD1127 Datasheet and Specifications PDF

The 2SD1127 is a Silicon NPN Transistor.

2SD1127 Datasheet

2SD1127 Datasheet (Hitachi Semiconductor)

Hitachi Semiconductor

2SD1127 Datasheet Preview

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2SD1127 Datasheet (Inchange Semiconductor)

Inchange Semiconductor

2SD1127 Datasheet Preview

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 10A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and r.

(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 25mA VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 25mA ICBO Collector Cutoff Current VCB= 120V; IE=0 hFE DC Current Gain IC= 10A; VCE= 2V Switching times ton Turn-On.

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