The 2SD2399 is a NPN Transistor.
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SD2399 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V ·Minimum Lot-to. specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA 1.5 V ICBO Collector Cutoff Current . |
| Part Number | 2SD2399 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220F package ·Complement to type 2SB1568 ·High DC current gain. ·DARLINGTON APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector E. r cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=50µA; IE=0 IC=1mA; IB=0 IC=2A ; IB=4mA VCB=80V;IE=0 VEB=5V;IC=0 IC=2A ; VCE=3V IE=0 ; VCB=10V; f=1MHz IE=-0.2A ; VCE=5V;f=10MHz 1000 MIN 80 80 2SD2399 SYMBOL V(BR)CBO. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Win Source | 6000 | 175+ : 0.3361 USD 420+ : 0.276 USD 650+ : 0.268 USD 895+ : 0.2587 USD |
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