| Part Number | 2SD2495 Datasheet |
|---|---|
| Manufacturer | Sanken |
| Overview |
Equivalent circuit
C
Darlington
2SD2495
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5.
n (µs) 0.8typ tstg (µs) 6.2typ tf (µs) 1.1typ
2.54
3.9 B C E
±0.2
0.8±0.2
a b
ø3.3±0.2
Weight : Approx 2.0g a. Type No. b. Lot No.
I C * V CE Characteristics (Typical) A 1m V CE ( sat ) * I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E ( s a t) (V ) 3 6 I C * V BE . |
2SD2495 Datasheet and Specifications PDF
The 2SD2495 is a Silicon NPN Transistor.
| Part Number | 2SD2495 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220F package ·Complement to type 2SB1626 APPLICATIONS ·For audio,series regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) . off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=5A; IB=5mA IC=5A; IB=5mA VCB=110V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IC=0.5A ; VCE=12V f=1MHz;VCB=10V 5000 MIN 110 2SD2495 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB. |
| Part Number | 2SD2495 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 5A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 5A, IB= 5mA) ·Co. specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 5mA ICBO Collector Cutoff Current VCB= 110V; IE= 0 IEBO Emitter Cutoff C. |