| Part Number | 2SD2634 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number : ENN6474B
2SD2634
NPN Triple Diffused Planar Silicon Transistor
2SD2634
Color TV Horizontal Deflection Output Applications
Features
• • • • •
Package Dimensions
unit : mm 2174A
[2S.
* * * * * Package Dimensions unit : mm 2174A [2SD2634] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 3.5 1 : Base 2 : Coll. |
2SD2634 Datasheet and Specifications PDF
The 2SD2634 is a NPN Triple Diffused Planar Silicon Transistor.
| Part Number | 2SD2634 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output PINNING PIN 1 2 3 Base Collector Fig.1 simplified. cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Fall time CONDITIONS IC=100mA; IB=0 IC=4.5A;IB=0.9A IC=4.5A;IB=0.9A VCB=800V; IE=0 VCE=1500V ;RBE=0 VEB=4V; IC=0 IC=5A ; VCE=5V IC=1A ; VCE=5V IEC=7A IC=3A;RL=66.7A IB1=0.6A;-IB2=. |
| Part Number | 2SD2634 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA. tter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 IEBO Emitter Cutoff Curren. |