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2SD2645 Datasheet

The 2SD2645 is a NPN Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SD2645
ManufacturerInchange Semiconductor
Overview ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA. VCE(sat) Collector-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A VBE(sat) Base-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A ICBO Collector Cutoff Current VCB= 800V; IE= 0 ICES Collector Cutoff Current VCE= 1500V; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain.
Part Number2SD2645
DescriptionNPN Transistor
ManufacturerSANYO
Overview Ordering number : ENN6897A 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features • • • • • Package Dimensions unit : mm 2174A [2S.
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* Package Dimensions unit : mm 2174A [2SD2645] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 3.5 0.8 2.1 Specifications.

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