| Part Number | 2SD5071 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA. ector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A ;IB= 0.8A 1.5 V IEBO Emitter Cutoff Current VEB= 4V; IC=0 40 200 mA ICBO Collector-Base Cutoff Current VCB=800V; IE= 0 10 uA hFE DC Current Gain IC= 0.5A ; VCE= 5V 8 fT C. |
2SD5071 Datasheet and Specifications PDF
The 2SD5071 is a Silicon NPN Power Transistors.
| Part Number | 2SD5071 Datasheet |
|---|---|
| Description | Silicon NPN Power Transistors |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PML package ·High speed ·High breakdown voltage ·Built-in damper diode APPLICATIONS ·Color TV horizontal output application PINNING PIN 1 2 3 Base Collector Emitter DESCR. CB=800V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=10V IF=3.5A IC=3A;RL=66.7>;VCC=200V IB1=0.8A;IB2=-1.6A 40 8.0 V BEsat Base-emitter saturation voltage 1.5 V ICBO IEBO hFE fT VF tf Collector cut-off current 10 µA Emitter cut-off current 200 mA DC current gai. |