| Part Number | 2SD5076 Datasheet |
|---|---|
| Manufacturer | Savantic |
| Overview | ·With TO-3PML package ·High breakdown voltage ·High speed switching APPLICATIONS ·Color TV horizontal output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) an. quency Fall time CONDITIONS IC=4A;IB=0.8A IC=4A;IB=0.8A VEB=5V; IC=0 VCB=800V; IE=0 IC=1 A ; VCE=5V IC=1 A ; VCE=10V IC=4A;IB1=0.8A;IB2=-1.6A VCC=200V;RL=50= 8 MIN 2SD5076 SYMBOL VCEsat VBEsat IEBO ICBO hFE fT tf TYP. MAX 5.0 1.5 1.0 10 UNIT V V mA µA 3 0.4 MHz µs 2 Sava. |
2SD5076 Datasheet and Specifications PDF
The 2SD5076 is a Silicon NPN Power Transistors.
| Part Number | 2SD5076 Datasheet |
|---|---|
| Description | Silicon NPN Power Transistors |
| Manufacturer | Inchange Semiconductor |
| Overview |
·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed
·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for col.
0.8A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 4A; IB= 0.8A VCB= 800V; IE= 0
1.5
V
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0 mA
hFE
DC Current Gain
IC= 1A; VCE= 5V
8
fT
Current-Gain *Bandwidth Product IC= 1A; VCE= 10V tf Fall Tim. |