2SD826 Datasheet and Specifications PDF

The 2SD826 is a NPN Transistor.

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Max Operating Temp150 °C

2SD826 Datasheet

2SD826 Datasheet (Inchange Semiconductor)

Inchange Semiconductor

2SD826 Datasheet Preview

·Large Current Capability-IC= 5A ·High DC Current Gain- : hFE= 120-560 @ IC= 0.5A ·Low Saturation Voltage - : VCE(sat)= 0.5V(Max)@ IC= 3A, IB= 60mA ·Good Linearity of hFE ·Minimum Lot-to-Lot variation.

nless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 60mA ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain .

2SD826 Datasheet (SavantIC)

SavantIC

2SD826 Datasheet Preview

·With TO-126 package ·Low collector saturation voltage ·High DC current gain ·Large current capacity APPLICATIONS ·For 3V, 6V strobe applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connec.

ain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=3A; IB=60mA(pulse) IC=3A; IB=60mA(pulse) VCB=50V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=3A ; VCE=2V(pulse) IC=50mA ; VCE=10V f=1MHz ; VCB=10V 120 95 MIN 2SD826 SYMBOL VCEsat VBEsat ICBO IEBO hFE.

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