| Part Number | 2SH21 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
ADE–208–294 (Z)
2SH21 Silicon N-Channel IGBT
1st. Edition Feb. 1995 Application
High speed power switching
TO–3P
Features
• High speed switching • Low on saturation voltage
1 2
3
1
2
3
1. Gate .
* High speed switching * Low on saturation voltage 1 2 3 1 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage tempe. |
2SH21 Datasheet and Specifications PDF
The 2SH21 is a N-Channel MOSFET.
Key Specifications
| Length | 18.9 mm |
|---|---|
| Width | 12.8 mm |
| Max Operating Temp | 100 °C |
| Min Operating Temp | -40 °C |
| Part Number | 2SH21 Datasheet |
|---|---|
| Description | SILICON P EMITTER PLANAR TYPE TRANSISTOR |
| Manufacturer | Toshiba |
| Overview |
SILICON P EMITTER PLANAR TYPE (INDUSTRIAL APPLICATIONS)
2SH20 2SH21
RELAXATION OSCILLATOR, SCR TRIGGER AND TIMER APPLICATIONS. FEATURES
• High Oscillation Output Voltage : V0B1 =3V (Min.)
• Low Emit.
* High Oscillation Output Voltage : V0B1 =3V (Min.) * Low Emitter Reverse Current : I EC =0.1yA (Max.) * Wide Oscillation Area : Ip=3.5yA (Max. ) (2SH20) IV=6mA (Min.) Unit in mm 05.8UAX. 04.95MAX. gfe-5^ MAXIMUM RATINGS (Ta=25°C) CHARACTERISTICS Base 2 - Base 1 Voltage Base 1 - Emitter Voltage Ba. |