2SK1082 Datasheet and Specifications PDF

The 2SK1082 is a N-Channel MOSFET Transistor.

Key Specifications

Part Number2SK1082 Datasheet
ManufacturerInchange Semiconductor
Overview ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high . e Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=900V; VGS= 0 VSD Forward On-Voltage IS=6A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=1.
Part Number2SK1082 Datasheet
DescriptionN-Channel Silicon Power MOS-FET
ManufacturerFuji Electric
Overview w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c . .

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