| Part Number | 2SK1304 Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
2SK1304-VB
2SK1304-VB Datasheet N-Channel 100-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0085 at VGS = 10 V 100
0.010 at VGS = 6 V
ID (A) 100 85
FEATURES • Tren.
* TrenchFET® Power MOSFET * 175 °C Maximum Junction Temperature * Compliant to RoHS Directive 2002/95/EC TO-3P( N ) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 . |
2SK1304 Datasheet and Specifications PDF
The 2SK1304 is a N-Channel 100V MOSFET.
| Part Number | 2SK1304 Datasheet |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SK1304
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V sour.
* * * * Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1304 Absolute Maximum Ratings (Ta . |
| Part Number | 2SK1304 Datasheet |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Manufacturer | Renesas |
| Overview |
2SK1304
Silicon N Channel MOS FET
REJ03G0923-0200 (Previous: ADE-208-1262) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive curr.
Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive * * * * Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Sourc. |