2SK1317 Datasheet and Specifications PDF

2SK1317 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitab.

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* High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1317 Absolute Maximum Ratings (Ta = 25°C) Item Drai.

2SK1317 Silicon N Channel MOS FET Application High speed power switching Features • High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable.

* High breakdown voltage VDSS = 1500 V
* High speed switching
* Low drive current
* No secondary breakdown
* Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 G REJ03G0929-0200 (Previous: ADE-208-1268) Rev.2.0.