| Part Number | 2SK1341 Datasheet |
|---|---|
| Manufacturer | Renesas |
| Overview |
2SK1341
Silicon N Channel MOS FET
REJ03G0938-0200 (Previous: ADE-208-1278) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low .
* * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source S 3 1 2 Rev.2.00 Sep 07, 2005 page 1 of 6 http:/. |
2SK1341 Datasheet and Specifications PDF
The 2SK1341 is a Silicon N-Channel MOSFET.
| Part Number | 2SK1341 Datasheet |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SK1341
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching reg.
* * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source v. |
| Part Number | 2SK1341 Datasheet |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designe. ; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 VSD Diode Forward Voltage IF=6A; VGS=0 tr Rise time ton Turn-on. |