2SK1520 Datasheet and Specifications PDF

The 2SK1520 is a Silicon N-Channel MOSFET.

Key Specifications

Max Operating Temp150 °C
Part Number2SK1520 Datasheet
ManufacturerHitachi Semiconductor
Overview 2SK1519, 2SK1520 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 .
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* Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1519, 2SK1520 Absolute Maximum Ratings (Ta = 25°C) Item Dr.
Part Number2SK1520 Datasheet
DescriptionSilicon N-Channel MOSFET
ManufacturerRenesas
Overview 2SK1519, 2SK1520 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 120 ns) .
* Low on-resistance
* High speed switching
* Low drive current
* Built-in fast recovery diode (trr = 120 ns)
* Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) G 1 23 REJ03G0948-0300 (Previous: ADE-208-1288) Rev.3.00 .
Part Number2SK1520 Datasheet
DescriptionN-Channel MOSFET Transistor
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor 2SK1520 ESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable op. ETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=15A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 VSD Dio.

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