2SK1692 Datasheet
2SK1692 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed. high current switch.
ain-Source Breakdown Voltage VGS=0; ID= 10mA MIN TYP MAX UNIT 900 V VGS(th) Gate Threshold Voltage VDS=10V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3.5A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 1.5 3.5 .
2SK1692 Datasheet (Toshiba)
Toshiba
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