| Part Number | 2SK2022-01M Datasheet |
|---|---|
| Manufacturer | Fuji Electric |
| Overview | 2SK2022-01M FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 1,6Ω . High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 1,6Ω 5A 40W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings an. |
2SK2022-01M Datasheet and Specifications PDF
The 2SK2022-01M is a N-channel MOS-FET.
| Part Number | 2SK2022-01M Datasheet |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switchi. 25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 500 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.5 3.0 3.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 2.5A 1.2 1.6 Ω IGSS Gate-Body Leakage Current VGS= ±30. |
| Part Number | 2SK2022-01M Datasheet |
|---|---|
| Description | N-Channel 650V Power MOSFET |
| Manufacturer | VBsemi |
| Overview |
2SK2022-01M-VB
2SK2022-01M-VB Datasheet
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Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
0
VG.
* Low figure-of-merit (FOM) Ron x Qg * Low input capacitance (Ciss) * Reduced switching and conduction losses * Ultra low gate charge (Qg) * Avalanche energy rated (UIS) APPLICATIONS * Server and telecom power supplies * Switch mode power supplies (SMPS) * Power factor correction power supplies (PFC. |