2SK2257-01 Datasheet

The 2SK2257-01 is a N-channel MOS-FET.

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Part Number2SK2257-01
ManufacturerFuji Electric
Overview 2SK2257-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 0,4Ω 1. High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 500V 0,4Ω 17A 150W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings .
Part Number2SK2257-01
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview ·Drain Current ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switchi. PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA VSD Diode Forward on-Voltage IF= 17A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 9A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate.