| Part Number | 2SK2608 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3.78Ω(TYP) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob.
*Static drain-source on-resistance: RDS(on) ≤3.78Ω(TYP) *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION * Efficient and reliable device for use in a wide variety of applications *ABSOLUTE. |
2SK2608 Datasheet and Specifications PDF
The 2SK2608 is a N-Channel MOSFET.
| Part Number | 2SK2608 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Toshiba |
| Overview | 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2608 Switching Regulator Applications z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward trans. (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. . |