| Part Number | 2SK3141 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SK3141
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-680B (Z) 3rd. Edition February 1999 Features
• Low on-resistance R DS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device .
* Low on-resistance R DS(on) = 4 mΩ typ. * Low drive current * 4 V gate drive device can be driven from 5 V source Outline TO *220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3141 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drai. |
2SK3141 Datasheet PDF
The 2SK3141 is a N-Channel MOSFET.
| Part Number | 2SK3141 Datasheet |
|---|---|
| Description | Silicon N-Channel MOS FET |
| Manufacturer | Renesas |
| Overview |
2SK3141
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 4 mΩ typ.
• Low drive current • 4 V gate drive device can be driven from 5 V source
Outline
RENESAS.
* Low on-resistance RDS(on) = 4 mΩ typ. * Low drive current * 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G REJ03G1070-0400 (Previous: ADE-208-680B) Rev.4.00 Sep 07, 2005 D 1. Gate 2. Drain (Flange) 3. Source S Rev.4. |