2SK3270-01 Datasheet and Specifications PDF

2SK3270-01 Trench Gate MOSFET > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 6,5mΩ ±80A 135W > Outline Drawing > Applicatio.

High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 6,5mΩ ±80A 135W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC.

·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuou.

*Drain Current : ID= 80A@ TC=25℃
*Drain Source Voltage : VDSS= 60V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max) @ VGS= 10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*motor drive, DC-DC converter, power sw.