| Part Number | 2SK3424 Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
The 2SK3424 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with.
a
low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES * 4.5 V drive available * Low on-state resistance RDS(on)1 = 11.5 mΩ MAX. (VGS = 10 V, ID = 24 A) * Low gate charge QG = . |
2SK3424 Datasheet and Specifications PDF
The 2SK3424 is a N-CHANNEL POWER MOSFET.
| Part Number | 2SK3424 Datasheet |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage-Continuou.
*Drain Current : ID= 48A@ TC=25℃ *Drain Source Voltage : VDSS= 30V(Min) *Static Drain-Source On-Resistance : RDS(on) = 11.5mΩ(Max) @ VGS= 10V *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *motor drive, DC-DC converter, power s. |
| Part Number | 2SK3424 Datasheet |
|---|---|
| Description | N-Channel 30V MOSFET |
| Manufacturer | VBsemi |
| Overview |
2SK3424-VB
2SK3424-VB Datasheet
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration Package
TO-220AB
30 0.0.
* Trench power MOSFET * Package with low thermal resistance * 100 % Rg and UIS tested D G GD S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction. |
| Part Number | 2SK3424 Datasheet |
|---|---|
| Description | MOS Field Effect Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type MOS Field Effect Transistor 2SK3424 MOSFET Features 4.5-V drive available Low on-state resistance RDS(on)1 = 1.5m MAX. (VGS = 10 V, ID = 24 A) Low gate charge QG = 34 nC TYP. (ID = 48 A, V. 4.5-V drive available Low on-state resistance RDS(on)1 = 1.5m MAX. (VGS = 10 V, ID = 24 A) Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 24V, VGS = 10 V) Built-in gate protection diode Surface mount device available Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to sour. |