2SK3433 Datasheet

The 2SK3433 is a MOS Field Effect Transistor.

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Part Number2SK3433
ManufacturerKexin Semiconductor
Overview SMD Type MOS Field Effect Transistor 2SK3433 MOSFET Features Super low on-state resistance: RDS(on)1 = 26m MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 41 m MAX. (VGS = 4 V, ID = 42 A) Low Ciss: Ciss =1. Super low on-state resistance: RDS(on)1 = 26m MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 41 m MAX. (VGS = 4 V, ID = 42 A) Low Ciss: Ciss =1500 pF TYP. Built-in gate protection diode +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+.
Part Number2SK3433
DescriptionN-Channel MOSFET Transistor
ManufacturerInchange Semiconductor
Overview ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuou.
*Drain Current : ID= 40A@ TC=25℃
*Drain Source Voltage : VDSS= 60V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 26mΩ(Max) @ VGS= 10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*motor drive, DC-DC converter, power swi.
Part Number2SK3433
DescriptionN-Channel MOSFET
ManufacturerNEC
Overview The 2SK3433 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) 5 RDS(on.
* Super low on-state resistance: RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) 5 RDS(on)2 = 41 mΩ MAX. (VGS = 4.0 V, ID = 20 A)
* Low Ciss: Ciss = 1500 pF TYP.
* Built-in gate protection diode (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Curr.