2SK3568 Datasheet and Specifications PDF

The 2SK3568 is a N-Channel MOSFET.

Key Specifications

PackageTO-220-3
Mount TypeThrough Hole
Max Operating Temp150 °C
Part Number2SK3568 Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V ·Low leakage current: IDSS <100 µA @VDS = 500 V ·100% avalanche tested ·Minimum Lot-to-Lot variations for r.
* Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V
*Low leakage current: IDSS <100 µA @VDS = 500 V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching Regulator Applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA.
Part Number2SK3568 Datasheet
DescriptionN-Channel MOSFET
ManufacturerToshiba
Overview 2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ.) • High forwa. under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolut.

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