2SK3778-01 Datasheet
2SK3778-01 Datasheet (Fuji Electric)
Fuji Electric
2SK3778-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, A.
High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source .
2SK3778-01 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuo.
*Drain Current : ID= 59A@ TC=25℃
*Drain Source Voltage
: VDSS= 250V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 53mΩ(Max) @ VGS= 10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
*motor drive, DC-DC converter, power sw.