2SK806 Datasheet and Specifications PDF

The 2SK806 is a Silicon N-channel Power F-MOS FET.

Part Number	2SK806 Datasheet
Description	N-Channel MOSFET Transistor
Manufacturer	Inchange Semiconductor
Overview	·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed . ℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=25 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=48.