| Part Number | 3N258 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
2KBP005M/3N253 - 2KBP10M/3N259 — Bridge Rectifiers
November 2010
2KBP005M/3N253 - 2KBP10M/3N259 Bridge Rectifiers
Features
• Surge overload rating: 60 amperes peak. • Reliable low cost construction .
* Surge overload rating: 60 amperes peak. * Reliable low cost construction utilizing molded plastic technique. * UL certified, UL #E111753. + ~ ~ _ KBPM * The nodules on the package may not be present on the actual parts. Absolute Maximum Ratings * Symbol VRRM VRMS VR IF(AV) IFSM www.DataSheet4U. |
3N258 Datasheet
The 3N258 is a (3N253 - 3N259) Bridge Rectifiers.
| Part Number | 3N258 |
|---|---|
| Description | Glass Passivated Single-Phase Bridge Rectifier |
| Manufacturer | Vishay |
| Overview |
2KBPxxM, 3N25x
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
− ~ ~
+
Case Style KBPM
+~~−
PRIMARY CHARACTERISTICS
Package
KBPM
IF(AV) VRRM IFSM
IR .
* UL recognition file number E54214 * Ideal for printed circuit board * High surge current capability * High case dielectric strength * Solder dip 275 °C max. 10 s, per JESD 22-B106 * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Gene. |
| Part Number | 3N258 |
|---|---|
| Description | GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
| Manufacturer | General Semiconductor |
| Overview |
2KBP005M THRU 2KBP10M SERIES 3N253 THRU 3N259
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Case Style KBPM
0.600 (15.24) 0.125 x 45o (3.2) 0.560 (14.22)
Forward C.
0.460 (11.68) 0.420 (10.67)
0.500 (12.70) 0.460 (11.68)
60 (15.2) MIN. 0.060 (1.52) 0.160 (4.1) 0.140 (3.6)
0.50 (12.7) MIN.
0.034 (8.6) 0.028 (7.6) DIA.
* Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * This series is UL listed under the Recognized Component In. |
| Part Number | 3N258 |
|---|---|
| Description | SINGLE-PHASE FULL-WAVE BRIDGE |
| Manufacturer | Motorola Semiconductor |
| Overview | MDA200 series (3N253 thru 3N259) ® MOTOROLA MINIATURE INTEGRAL DIODE ASSEMBLIES · .. with silicon rectifier chips interconnected and encapsulated into voidless rectifier bridge circuits. • High Re. receded and followed by rated current and voltage, TA '" 55°C) Operating and Storage Junction Temperature Range IFSM ~ 60 (for 1 cycle) _______ Amp .TJ.T,tg -55to+'65- °c ELECTRICAL CHARACTERISTICS Characteristic Instantaneous Forward Voltage (Per Diode) {iF =3.'4 Amp, TJ =250CI Reverse Current . |