Datasheet4U Logo Datasheet4U.com

4069UB Datasheet

The 4069UB is a HEX INVERTER. Download the datasheet PDF and view key features and specifications below.

Part Number4069UB
ManufacturerSTMicroelectronics
Overview OF ”B” SERIES CMOS DEVICES” EY (Plastic Package) F (Ceramic Frit Seal Package) M1 (Micro Package) C1 (Plastic Chip Carrier) ORDER CODES : HCC4069UBF HCF4069UBM1 HCF4069UBEY HCF4069UBC1 PIN CONNE. m-power TTL-drive and logic-level-conversion capabilities of circuits such as HCC/HCF4049B Hex Inverter/Buffers are not required. June 1989 1/12 HCC/HCF4069UB SCHEMATIC DIAGRAM OF ONE OF SIX IDENTICAL INVERTERS. ABSOLUTE MAXIMUM RATINGS Symbol V DD* Vi II Pt ot Parameter Supply Voltage : HCC Types.
Part Number4069UB
DescriptionHex Inverter
ManufacturerHitachi Semiconductor
Overview Unit: mm 19.20 20.32 Max 14 8 6.30 7.40 Max 1 2.39 Max 1.30 7 7.62 0.51 Min 2.54 Min 5.06 Max 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° + 0.10 Hitachi Code JEDEC EIAJ Weight (reference val. rty rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be su.
Part Number4069UB
DescriptionHex Inverter
Manufactureronsemi
Overview MC14069UB Hex Inverter The MC14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low.
* Supply Voltage Range = 3.0 Vdc to 18 Vdc
* Capable of Driving Two Low−Power TTL Loads or One Low−Power Schottky TTL Load Over the Rated Temperature Range
* Triple Diode Protection on All Inputs
* Pin−for−Pin Replacement for CD4069UB
* Meets JEDEC UB Specifications
* NLV Prefix for Automotive and O.
Part Number4069UB
DescriptionHex Inverter
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14068B See Page 6-5 Hex Inverter The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic s. ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ Value Unit V V
  – 0.5 to + 18.0 Vin, Vout Iin, Iout PD Input or Output Voltage (DC or Transient)
  – 0.5 to VDD + 0.5 ± 10 500 Input or Output C.