40N06 Datasheet and Specifications PDF

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.035Ω(Max) ·Fast Switching ·Minimum Lo.

*Drain Current ID= 40A@ TC=25℃
*Drain Source Voltage- : VDSS= 60V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 0.035Ω(Max)
*Fast Switching
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching power supplies,converters,AC and DC motor con.

N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 DTU40N06 FEATURES ID (A) 40 rDS(on) (W) 0.016 @ VGS = 10 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 1.

ID (A) 40 rDS(on) (W) 0.016 @ VGS = 10 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested TO-252 D G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain.