4957AGM Datasheet
4957AGM Datasheet (Advanced Power Electronics Corp)
Advanced Power Electronics Corp
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolu.
2191 Free Datasheet AP4957AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-7A VGS=-4.5V, ID=-5A VGS(th) gfs.
4957AGM Datasheet (VBsemi)
VBsemi
4957AGM-VB 4957AGM-VB Datasheet Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.021 at VGS = - 10 V 0.028 at VGS = - 4.5 V ID (A)d, e - 8.0 - 7.0 Qg.
* Halogen-free
* TrenchFET® Power MOSFET
* 100 % UIS Tested
APPLICATIONS
* Load Switches
- Notebook PCs
- Desktop PCs
- Game Stations
S1
RoHS
COMPLIANT
S2
G1
G2
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-S.