4N22A Datasheet and Specifications PDF

Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22A, 4N23A and 4N24A can be tested to customer specifi.

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* Collector is electrically isolated from the case. Overall current gain
*1.5 typical (4N24A) Base lead provided for conventional transistor biasing Rugged package High gain, high voltage transistor +1kV electrical isolation Applications:
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* Eliminate ground loops Level shifting .

Each isolator in this series consists of an infrared emi ng diode and a NPN silicon phototransistor, which are mounted in a herme cally sealed TO‐78 package. Devices are designed for military and/or .

* TO-78 hermetically sealed package
* High current transfer ratio
* 1 kV electrical isolation
* Base contact provided for conventional transistor biasing
* TX and TXV devices processed to MIL-PRF-19500 Description: Each isolator in this series consists of an infrared emi ng diode and a NPN si.