| Part Number | 4N65 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed. S V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=4.4A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.2A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain C. |
4N65 Datasheet and Specifications PDF
The 4N65 is a N-Channel MOSFET Transistor.
| Part Number | 4N65 Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Unisonic Technologies |
| Overview |
The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characterist.
* RDS(ON) ≤ 2.5 Ω @ VGS=10V, ID=2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
Power MOSFET
* SYMBOL Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-397.Q 4N65 Power MOSFET * ORDERING INFORMATION O. |
| Part Number | 4N65 Datasheet |
|---|---|
| Description | 650V N Channel Power MOSFET |
| Manufacturer | JINAN JINGHENG |
| Overview |
R SEMICONDUCTOR
4N65 650V N-Channel Power MOSFET
FEATURES
● RDS(ON)<2.4Ω @ VGS=10V ● Fast switching capability ● Lead free in compliance with EU RoHS directive. ● Green molding compound
MECHANICAL D.
* RDS(ON)<2.4Ω @ VGS=10V * Fast switching capability * Lead free in compliance with EU RoHS directive. * Green molding compound MECHANICAL DATA PRODUCT SUMMARY V DS (V) RDS(on) (Ω) 650 2.4 @ VGS =10V TO-220AB 4N65 ITO-220AB 4N65F ID (A) 4 TO-263 4N65D * Case:TO-220,ITO-220,TO-251,TO-252, TO-. |
| Part Number | 4N65 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Zibo Seno |
| Overview |
4N60 4N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic.
* RDS(ON) = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness
* SYMBOL 2.Drain 4N60 4N65 Power MOSFET 1 1 TO-220 ITO-220/TO-. |