| Part Number | 55N10 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Drain Current ID= 55A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast Switching Speed APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE. ARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance . |
55N10 Datasheet and Specifications PDF
The 55N10 is a N-Channel MOSFET Transistor.
| Part Number | 55N10 Datasheet |
|---|---|
| Description | FQA55N10 |
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min.
* * * * * * * 61A, 100V, RDS(on) = 0.026Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 130 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3P FQA Series ! S Abs. |