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5N60 Datasheet

The 5N60 is a N-Channel MOSFET Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number5N60
ManufacturerInchange Semiconductor
Overview ·Drain Current ID= 5.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·AC Ada. 0 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=5.6A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.5A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 .
Part Number5N60
DescriptionN-Channel Power MOSFET
ManufacturerNell Power Semiconductor
Overview The Nell 5N60 is a three-terminal silicon device with current conduction capability of 5A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage o. RDS(ON) = 2.2Ω@VGS = 10V Ultra low gate charge(20nC max.) Low reverse transfer capacitance (CRSS = 6.5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-251 (I-PAK) (5N60F) D D G S TO-252 (D-PAK) (5N60G) GDS TO-220A.
Part Number5N60
DescriptionN-Channel MOSFET
ManufacturerHAOHAI
Overview 5A, 600V, N 5N60 Series N-Channel MOSFET H FQP5N60C FQPF5N60C H5N60P H5N60F 5N60 HAOHAI P: TO-220AB F: TO-220FP 50Pcs 1000Pcs 5000Pcs 　■APPLICATION 　　ELECTRONIC BALLAST . 　　LOW ON-RESISTANCE 　　FAST SWITCHING 　　HIGH INPUT RESISTANCE 　　RoHS COMPLIANT 　　Package: TO-220AB & TO-220F ID=5A BVDSS=600V RDS(on)=1.6Ω 　
* 　　、、、、、RoHS 　
* 　　、LCD、LED、、UPS、 　　、、、、、、 　　、、 　
* 　　TO-220AB TO-220P（） 　　TO-220F TO-220FP（） 5N60 Series Pin Assignment 3-Lead Plastic TO-220AB Package Co.
Part Number5N60
Description5A 600V N-channel Enhancement Mode Power MOSFET
ManufacturerROUM
Overview These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords wi.
* Fast Switching
* Low ON Resistance(Rdson≤1.7Ω)
* Low Gate Charge(Typical:19.5nC)
* Low Reverse Transfer Capacitances(Typical:7.5pF)
* 100% Single Pulse Avalanche Energy Test
* 100% ΔVDS Test 3 Applications
* used in various power switching circuit for system miniaturization and higher efficiency. .