65F6110 Datasheet and Specifications PDF

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65F6110-VB TO247 65F6110-VB TO247 Datasheet Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 750 VGS = 10 V 278.

* Fast body diode MOSFET using E series technology
* Reduced trr, Qrr, and IRRM
* Low figure-of-merit (FOM): Ron x Qg
* Low input capacitance (Ciss)
* Low switching losses due to reduced Qrr
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS) TO-247AC S D G D G S N-Channel MOSFET APPLICAT.