AD161 Datasheet
AD161 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Wide Area of Safe Operation ·DC Current Gain- : hFE=50-350@IC= 0.5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance a.
L PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Satura.
AD161 Datasheet (Siemens Semiconductor Group)
Siemens Semiconductor Group
Siemens Transistor AD161 Datasheet Germanium NPN Transistor AD161 AF Power Transistor 32V / 3A DATASHEET OEM – Siemens Source: Siemens Databook 1970/71 Datasheet Rev. 1.3 – 02/19 – data without w.
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