The AO4446 is a N-Channel MOSFET.
Alpha & Omega Semiconductors
The AO4446 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use in PWM applications. Standar.
VDS (V) = 30V ID = 15A (VGS = 10V) RDS(ON) < 8.5mΩ (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 4.5V) S S S G D D D D D SOIC-8 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Av.
Kexin Semiconductor
SMD Type N-Channel MOSFET AO4446 (KO4446) ■ Features ● VDS (V) = 30V ● ID = 15 A (VGS = 10V) ● RDS(ON) < 8.5mΩ (VGS = 10V) ● RDS(ON) < 14.5mΩ (VGS = 4.5V) SOP-8 +0.04 0.21 -0.02 D MOSFET 1.50 0.
* VDS (V) = 30V
* ID = 15 A (VGS = 10V)
* RDS(ON) < 8.5mΩ (VGS = 10V)
* RDS(ON) < 14.5mΩ (VGS = 4.5V)
SOP-8
+0.04 0.21 -0.02
D
MOSFET
1.50 0.15
1 Source 2 Source 3 Source 4 Gate
5 Drain 6 Drain 7 Drain 8 Drain
G S
* Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage Gate-Source Voltage.
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