AO7600 Datasheet and Specifications PDF

The AO7600/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, an inverter, and .

n-channel VDS (V) = 20V ID = 0.9A (VGS=4.5V) p-channel -20V -0.6A (VGS=-4.5V) RDS(ON) RDS(ON) < 300mΩ (VGS=4.5V) < 550mΩ (VGS=-4.5V) < 350mΩ (VGS=2.5V) < 700mΩ (VGS=-2.5V) < 450mΩ (VGS=1.8V) < 950mΩ (VGS=-1.8V) SC-70-6 (SOT-323) Top View D1 D2 GG S1 1 6 G1 2 5 D2 3 4 D1 G2 S2 S1 n-channel.

AO7600-VB AO7600-VB Datasheet N-and P- Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) 0.090 at VGS = 4.5 V 0.110 at VGS = 2.5 V 0.130.

* Halogen-free According to IEC 61249-2-21 Definition
* Trench Power MOSFETs: 1.8 V Rated
* Thermally Enhanced SC-70 Package
* Fast Switching
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Load Switch for Portable Devices SOT-363 SC-70 (6-LEADS) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top Vie.