| Part Number | AOB2140L Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized Ruggedness • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=. M IDSM IAS EAS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 195 195 1000 57 45.5 70 735 272 136 8.3 5.3 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambien. |
AOB2140L Datasheet and Specifications PDF
The AOB2140L is a 40V N-Channel MOSFET.
| Part Number | AOB2140L Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Drain Current ID= 195A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Designed . OL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=85A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=85A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zer. |