AOB2606L Datasheet and Specifications PDF

The AOT2606L & AOB2606L & AOTF2606L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power los.

sipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 C AOTF2606L Units V V VGS TC=25° C TC=100° C TA=25° C TA=70° C ID ID.

sc N-Channel MOSFET Transistor AOB2606L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations fo.

*Static drain-source on-resistance: RDS(on) ≤ 6.5mΩ
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Be suitable for synchronous rectification for server and general purpose applications .