AOB2608L Datasheet
AOB2608L Datasheet (Alpha & Omega Semiconductors)
Alpha & Omega Semiconductors
The AOT2608L/AOB2608L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimi.
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 C Maximum 60 ±20 72 54 180 11 8.5 50 125 100 50 2.1 1.3 -55 to 175 Units V V A VGS TC=25° C C TC=100° TA=25.
AOB2608L Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor AOB2608L ·FEATURES ·Drain Current –ID= 72A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.6mΩ(Max) ·100% avalanche t.
*Drain Current
*ID= 72A@ TC=25℃
*Drain Source Voltage-
: VDSS= 60V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 7.6mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*Be suitable for synchronous rectification for ser.