AOB286L Datasheet
AOB286L Datasheet (Alpha & Omega Semiconductors)
Alpha & Omega Semiconductors
Product Summary The AOT286L/AOB286L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power l.
S Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG S G Maximum 80 ±20 70 55 245 13 10.5 50 125 167 83 2.1 1.3 -55 to 175 G S G S Units V V A A A mJ W W °C Thermal Characteristics.
AOB286L Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor AOB286L ·FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.7mΩ(Max) ·100% avalanche te.
*Drain Current
*ID= 70A@ TC=25℃
*Drain Source Voltage-
: VDSS= 80V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 5.7mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*Be suitable for synchronous rectification for ser.