AOB2918L Datasheet
AOB2918L Datasheet (Alpha & Omega Semiconductors)
Alpha & Omega Semiconductors
Product Summary The AOT2918L & AOB2918L & AOTF2918L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are mini.
45 Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike I 10µs IDSM IAS, IAR EAS, EAR VSPIKE 13 10 35 61 120 TC=25°C Power Dissipation B TC=100°C PD 267 133 41 20 TA=25°C Power Dissipation A TA=70°C PDSM 2.1 1.33 Junction and Storage Tem.
AOB2918L Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor AOB2918L ·FEATURES ·Drain Current –ID= 90A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max) ·100% avalanche te.
*Drain Current
*ID= 90A@ TC=25℃
*Drain Source Voltage-
: VDSS= 100V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 7mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*DESCRITION
*Be suitable for synchronous rectification for serv.