AOB29S50 Datasheet and Specifications PDF

The AOT29S50 & AOB29S50 & AOTF29S50 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications..

e pulsed avalanche energy G TC=25° C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness H Peak diode recovery dv/dt Junction and Storage Temperature Range Maximum lead temperature for soldering J purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-A.

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source.

*Drain Current
*ID= 29A@ TC=25℃
*Drain Source Voltage- : VDSS= 500V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies a.