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AOD2610 Datasheet

The AOD2610 is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberAOD2610
ManufacturerAlpha & Omega Semiconductors
Overview The AOD2610 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination o. ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C TC=100° C VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG Maximum 60 ±20 46 36 140 10 8 36 65 71.5 35.5 2.
Part NumberAOD2610
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview Isc N-Channel MOSFET Transistor AOD2610 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations f.
*With To-252(DPAK) package
*Low input capacitance and gate charge
*Low gate input resistance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .
Part NumberAOD2610
DescriptionN-Channel MOSFET
ManufacturerVBsemi
Overview AOD2610 AOD2610 Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.010 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 58 56 FEATURES • 175 °C Junction Temperature • Tren.
* 175 °C Junction Temperature
* TrenchFET® Power MOSFET
* Material categorization: D TO-252 www.VBsemi.com G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = .

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