| Part Number | AOD2910 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to. 5°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG G S Maximum 100 ±20 31 21.5 80 6.5 5 15 11 53.5 26.5 2.5 1.6 -55 to 175 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA . |
AOD2910 Datasheet
The AOD2910 is a 100V N-Channel MOSFET.
| Part Number | AOD2910 |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
AOD2910
·FEATURES ·Drain Current –ID= 31A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 24mΩ(Max) ·100% avalanche te.
*Drain Current *ID= 31A@ TC=25℃ *Drain Source Voltage- : VDSS= 100V(Min) *Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Be suitable for synchronous rectification for ser. |