AOD2922 Datasheet

The AOD2922 is a N-Channel MOSFET.

AOD2922 integrated circuit image
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Part NumberAOD2922
ManufacturerInchange Semiconductor
Overview Isc N-Channel MOSFET Transistor AOD2922 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations f.
*With To-252(DPAK) package
*Low input capacitance and gate charge
*Low gate input resistance
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .
Part NumberAOD2922
Description100V N-Channel AlphaMOS
ManufacturerAlpha & Omega Semiconductors
Overview • Latest Trench Power AlphaMOS (αMOS MV) technology • Very Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=1. A=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 20 40 Maximum Junction-to-Case Steady-State RqJC 7.3 G Form Tape & Reel S Minimum Order Qua.
Part NumberAOD2922
DescriptionN-Channel 100V MOSFET
ManufacturerVBsemi
Overview AOD2922-VB AOD2922-VB Datasheet N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) 15 D TO-252 FEATURES • Trench Power MOSFET • 150 .
* Trench Power MOSFET
* 150 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS .