| Part Number | AOD2N60A Datasheet |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| Overview | • Advanced High Voltage MOSFET technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Product Summary VDS @ Tj,max ID (at VGS=10V) RDS(ON) (at VGS=10. ive avalanche energy C,I Single pulsed avalanche energy H Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Ma. |
AOD2N60A Datasheet and Specifications PDF
The AOD2N60A is a 2A N-Channel MOSFET.
Key Specifications
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -50 °C |
| Part Number | AOD2N60A Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source.
*Drain Current *ID= 2A@ TC=25℃ *Drain Source Voltage- : VDSS=600V(Min) *Static Drain-Source On-Resistance : RDS(on) =4.7Ω(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and g. |