AOD514 Datasheet and Specifications PDF

• Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VG.

5°C Power Dissipation B TC=100°C PD 50 25 TA=25°C Power Dissipation A TA=70°C PDSM 2.5 1.6 Junction and Storage Temperature Range TJ, TSTG -55 to 175 G G D S Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State .

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.9mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation .

*Static drain-source on-resistance: RDS(on)≤5.9mΩ
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*DC/DC Converters in Computing
*Isolated DC/DC Converters in Telecom and Industrial
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA.